2015-09-07
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IV. * Прочтите предложения, укажите номера предложений со сказуемым в сослагательном наклонении и переведите все предложения;
1. Some materials could conduct electricity if their temperature were increased.
2. It is possible to find out the resistance of the conductor at any given temperature if the resistance at one temperature is known.
3. A redistribution of charges would take place if two
charged conductors were connected by a wire.
4. Potential in a point is equal to the work that would be
required to transfer that unit charge from infinity to that point.
5. If both metal contacts in a semiconductor contact rectifier were rectifying, the device would be, a series combination of two rectifiers in series opposing.
6. It is necessary that the electrical characteristics of semiconductor materials be changed.
7. If the wire is a large one and the current is a small one should use a thermometer to detect the developed heat.
8. If the structure were perfectly regular, all atoms would be in their proper places and no extra atoms would be present.
9. If placed in a different surrounding medium this device operated differently.
10. Were the vapors emitted collected they would be found to consist largely of water.
11. If the semiconductor had been disposed in a thick layer, the photoelectric increase of conductivity would have taken place only in the surface layers near where the light is absorbed.
12. Were the rectification at one contact ideal, we could use this material.
13. If the student had known the main features of this receiver, he could have used it in his experiment.
14. The engineer ordered that the test should be repeated.
V. Прочтите и переведите группы слов:
1. a rectifier characteristic; 2. the rectifier characteristic investigation; 3. a surface layer; 4. surface layer features; 5. the barrier layer application; 6. the barrier layer investigation; 7. the barrier layer thickness; 8. the resistivity magnitude;.9. an adjacent contact shape; 10. the adjacent contact shape features; 11. a semiconductor resistance; 12. a semiconductor resistance thermometer; 13. a rectifier contact area; 14, a rectifier barrier capacitance
VI. * Определите по суффиксам, к какой части речи относятся
слова, и переведите их:
1. rectify; 2. rectifier; 3. rectification; 4. local; 5. locality; 6. immediately; 7. destruction; 8. destructive; 9. eliminate; 10. elimination; 11, original; 12. originally; 13. opposition
VII. * Прочтите и переведите сочетания слов:
1. rectifying contacts; 2. to employ these rectifiers; 3. to employ heat treatment; 4. to accomplish heat treatment; 5. to decrease the layer thickness; 6.to mention the typical features of this device; 7. to study the origin of this phenomenon; 8. to destroy the rectification; 9. to destroy the equipment; 10, a danger of destruction; 11. destructive forces accompanying the explosion; 12. to penetrate through the surface; 13, to permit easy flow of current; 14. to permit the voltage to increase; 15 tо sегvе as a semiconductor; 16. a layer adjacent to the metal contact; 17. adjacent surfaces; 18. local changes; 19. a solid rectifier; 20. immediately adjacent contacts; 21, as well as these surfaces; 22. as well as these magnitudes; 23. to mention typical features
VIII. Прочтите и переведите предложения:
1. Properties of steel depend also on heat treatment the
metal has been subjected to.
2. It is desirable that heat treatment be used in this case.
3. A valve voltmeter is known to be one of the most useful
measuring instruments the radio engineer can possess,
4. It is necessary that this rectifier would serve as one-way
valve permitting current to flow easily in one direction and
with great difficulty in the other,
4. The blocking layer is known to consist of a very thin layer
of semiconductor, immediately adjacent to the metal contact.
5. The transmitter he will construct must operate on various
frequencies.
6. Were the wire a large one and the current were small we
should have to use a sensitive thermometer to detect the developed heat.
7. If the wire had been very thin and the current had been
large, the amount of generated heat would have been much
greater than that developed in the thick wire.
8. The way of current generation we are speaking about is
widely used in industry.
10. It is required that the rectification at one of these contacts
be as ideal as possible. •
11. We know the place of rectification at the non-ohmic
contact to be called the barrier layer or blocking layer.
12. If we had taken into consideration the properties of this
substance, we should have been careful when working with it.
13. The non-symmetrical varistors characteristics are considered
to depend upon the direction the voltage is applied in.
14. The object of this treatment is to increase the photosensitivity
of the lead sulfide layer in photoconductivity.
15. The magnitude of the local resistivity, as well as the
thickness of the layer itself is believed to depend upon the direction
and the magnitude of the voltage applied across the
contact.
IX. * Укажите дробью номер вопроса (числитель) и номер предложения из текста, которое является ответом на него (знаменатель):
1. What is the place of the rectification at the non-ohmic
contact called?
2. What does the magnitude of the local resistivity depend
upon?
3. What is a solid rectifier?
4. What does a semiconductor contact rectifier consist of?
5. What would happen if both of the semiconductor contacts
were rectifying?
6. What does a blocking layer consist of?
7. What is the primary function of a rectifier?
8. What is necessary in order to use the properties of the con
tact rectifier in the best way?
X. Переведите, не пользуясь словарем:
